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DATA SHEET
4.25GBPS 850NM VCSEL LC TOSA PACKAGE
HFE4192-58X
FEATURES:
850nm multi-mode oxide isolated VCSEL Capable of modulation operation from DC to 5Gbps TO-46 tilt window metal can component, prealigned into LC Sleeve Designed for drive currents between 3-15mA average Packaged with a back monitor Attenuated window can
This product is a high-performance 850nm VCSELs (Vertical Cavity SurfaceEmitting Lasers) designed for high-speed data communications and packaged with a custom designed power monitor diode. The power monitor diode can be used with appropriate feedback control circuitry to set a maximum power level for the VCSEL. These combined features simplify design for high data rate communication and eye safety. The device is designed to convert electrical current into optical power that can be used in fiber optic communications and other applications. As the current varies above threshold, the light intensity increases proportionally. It is designed to be used with inexpensive silicon or gallium arsenide detectors, but excellent performance can also be achieved with some indium gallium arsenide detectors. The low drive current requirement makes direct drive from PECL (Positive Emitter Coupled Logic) or ECL (Emitter Coupled Logic) gates possible and eases driver design. VCSELs produce circularly symmetric, non-astigmatic, narrow divergence beams that, with appropriate lensing, fiber couple all of the emitter power. This LC TOSA product is pre-aligned and focused fiber optic transmitters designed to interface with 50/125 and 62.5/125m multi-mode fiber.
Part Number
HFE4192-581
Description
LC TOSA with attenuated optics, monitor photodiode, normal polarity
HFE4192-582
LC TOSA with attenuated optics, monitor photodiode, reverse polarity
HFE4192-58X
4.25GBPS 850NM VCSEL
ABSOLUTE MAXIMUM RATINGS
Parameter
INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT 30mW at 820-860 nm PER IEC/EN 60825-1/A2.2001 AND 21 CFR 1040.10 AND 1040.11 EXCEPT FOR DEVIATIONS PURSUANT TO LASER NOTICE NO.50 DATED 26 JULY 2001
Rating
-40oC to +85oC -40oC to +85oC See note 1 (page 3) 260oC, 10 seconds 12mA 18mA 5V 5V 2mA
Storage temperature
Operating temperature
SEMICONDUCTOR LASER
Lead solder temperature Laser continuous average current
AVOID EXPOSURE: Invisible LASER radiation is emitted from this aperture. Advanced Optical Components 600 Millennium Drive, Allen, TX 75013
PN55449
Laser peak forward current with pulse width less than 1s Laser reverse voltage
LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT
Photodiode reverse voltage Photodiode reverse current
NOTICE: Stresses greater than those listed under "Absolute
Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operations section for extended periods of time may affect reliability.
HFE4192-58X
ELECTRICAL-OPTICAL CHARACTERISTICS
VCSEL Parameters Average Fiber Coupled Power Minimum coupling efficiency including wiggle Threshold Current Threshold Current maximum o deviation from 25 C value Temperature at minimum threshold current Slope Efficiency Test Condition I F = 7mA I F = 7mA Symbol P OC 55 I TH I TH I TH I TH TO /T P P/T VF ROF r tr tf RIN RS RS RS R s/T Symbol
o
Min.
Typ. 0.4
Max.
Units mW %
Notes 2 2
T A = 0 C to 70 C T A = 25oC to 85 oC T A = -40oC to 25 oC
o
o
0.5 -0.5
1.5
-30 0.05 0.035 -6000 830 850 0.06 0.07
2 1 1.7 1.5 10 0.09 0.13
mA mA mA mA o C mW/mA mW/mA mW/mA ppm/oC nm nm/oC
3 3 3 3 4
Slope Efficiency Temperature variation Peak Wavelength P Temperature Variation Spectral Bandwidth, RMS Laser Forward Voltage Laser Resonance Frequency Minimum Bias Relative to I th Rise and Fall Ti mes Relative Intensity Noise Series Resistance
T A = 25oC T A = -40oC T A = 85oC T A = -40oC to 85 oC I F = 7mA, T A = -40oC to 85oC I F = 7mA, T A = -40oC to 85 oC I F = 7mA I F = 7mA I F /I TH = 4 T A = -40oC to 85 oC Pavg = 0.400mW, Extinction Ratio = 10 1 GHz BW, I F = 7mA I F = 7mA , T A = 25oC T A = -40oC T A = 85oC I F = 7mA, T A = -40oC to 85 oC Test Condition Po = 0.4mW, T A = 25 C Po = 0.4mW, T A = -40oC Po = 0.4mW, T A = +85oC Po = 0.4mW, -40oC to85oC Po = 0mW, V R = 3V V R = 0V, Freq = 1MHz V R = 3V, Freq = 1MHz
5
860
1.8 5 4
0.65 2.0
nm V GHz ps dB/Hz ppm/oC Units mA mA %/ oC nA pF
25 20
-130 35
90 90 -122 50 60
10 10 6
Series Resistance Temperature Coefficient Photodiode Parameters Monitor Current
-3000 Min. 0.225 0.2 0.2 -0.1 .8 Typ. 0.4 0.4 0.4 0 1 75 40 Max. 0.6 0.65 0.65 0.1 1.2 20 100 55
7 Notes 8 8 8 8 8,9
Mon. Current Temp. Variation Monitor Current Tracking Dark Current PD Capacitance
I PD I PD I PD I PD /T Deltrk ID C
ELECTRO-OPTICAL CHARACTERISTICS (TA=25 oC unless otherwise stated)
HFE4192-58X
4.25GBPS 850NM VCSEL
NOTES
1. Reliability is a function of temperature, see www.finisar.com/aoc.php for details. For the purpose of these tests, IF is DC current. Threshold current varies as (TA - TO)2. It may either increase or decrease with temperature, depending upon relationship of TA to TO. The magnitude of the change is proportional to the threshold at TO. Slope efficiency is defined as PO/IF. To compute the value of Slope Efficiency at a temperature T, use the following equation: (T) (25oC)*[1+(/T)*(T-25)] 6. Rise and fall times specifications are the 20% - 80%. Most of the devices will measure <80ps fall time. To compute the value of Series Resistance at a temperature T, use the following equation: RS(T) RS(25oC)*[1+RS/T)*(T-25)]
8.
These specifications are for the TOSA component alone. Reflections introduced by any subsequent higher level assembly may affect these values. Monitor current tracking is defined as follows:
9.
2. 3.
Deltrk =
IPD(PO = 0.75mW) / 0.75mW IPD(PO = 0.45mW) / 0.45mW
10. Relaxation Oscillation Frequency (ROF) is determined by the relationship:
4. 5.
ROF =
1 2
r -1 tc 2
-
r t2
7
Where r= IF/ITH, tc is the photon lifetime (2.5ps), and 2 is the spontaneous emission lifetime (1ns). Both tc and 2 are functions of temperature. When operating at high temperature, the r (IF/ITH) value can be significantly reduced and still maintain adequate speed performance. This is recommended in order to preserve reliability.
TYPICAL PERFORMANCE CURVES
Emitted Power vs. Current: Power varies approximately linearly with current above threshold. Threshold Current vs. Temperature: Threshold current varies parabolically with temperature; thus it can be nearly constant for a limited temperature range.
Emitted Power
Threshold Current
Pmax
I TH
IMIN [1.1x10 (T-TMIN ) +1]
-4
2
Typical operating current / power I th Current
TMIN , I MIN
Temperature
HFE4192-58X
MOUNTING DIMENSIONS
MOUNTING DIMENSIONS (for reference only): All dimensions are in inches.
PINOUT
Number 1 2 3 4
HFE4192-581
VCSEL Cathode VCSEL Anode Monitor Diode Cathode Monitor Diode Anode (Case)
HFE4192-582
VCSEL Anode VCSEL Cathode Monitor Diode Cathode Monitor Diode Anode (Case)
HFE4192-58X
4.25GBPS 850NM VCSEL
ADVANCED OPTICAL COMPONENTS
Finisar's ADVANCED OPTICAL COMPONENTS division was formed through strategic acquisition of key optical component suppliers. The company has led the industry in high volume Vertical Cavity Surface Emitting Laser (VCSEL) and associated detector technology since 1996. VCSELs have become the primary laser source for optical data communication, and are rapidly expanding into a wide variety of sensor applications. VCSELs' superior reliability, low drive current, high coupled power, narrow and circularly symmetric beam and versatile packaging options (including arrays) are enabling solutions not possible with other optical technologies. ADVANCED OPTICAL COMPONENTS is also a key supplier of Fabrey-Perot (FP) and Distributed Feedback (DFB) Lasers, and Optical Isolators (OI) for use in single mode fiber data and telecommunications networks
AOC CAPABILITIES
ADVANCED OPTICAL COMPONENTS' advanced capabilities include: 1, 2, 4, 8, and 10Gbps serial VCSEL solutions 1, 2, 4, 8, and 10Gbps serial SW DETECTOR solutions VCSEL and detector arrays 1, 2, 4, 8, and 10Gbps FP and DFB solutions at 1310 and 1550nm 1, 2, 4, 8, and 10Gbps serial LW DETECTOR solutions Optical Isolators from 1260 to 1600nm range Laser packaging in TO46, TO56, and Optical subassemblies with SC, LC, and MU interfaces for communication networks VCSELs operating at 670nm, 780nm, 980nm, and 1310nm in development Sensor packages include surface mount, various plastics, chip on board, chipscale packages, etc. Custom packaging options
LOCATION
Allen, TX - Business unit headquarters, VCSEL wafer growth, wafer fabrication and TO package assembly. Fremont, CA - Wafer growth and fabrication of 1310 to 1550nm FP and DFB lasers. Shanghai, PRC - Optical passives assembly, including optical isolators and splitters.
SALES AND SERVICE
Finisar's ADVANCED OPTICAL COMPONENTS division serves its customers through a worldwide network of sales offices and distributors. For application assistance, current specifications, pricing or name of the nearest Authorized Distributor, contact a nearby sales office or call the number listed below.
Phone:1-866-MY-VCSEL USA (toll free) 1-214-509-2700 USA (Direct dial) 44 (0) 174 336 5533 Europe 886-935-409898 China & Taiwan 81-90-4437-1130 Japan 82-11-220-6153 Asia Pacific & Korea
Fax: 1-214-509-3709 USA
Email: support@adopco.com WEB: www.finisar.com/aoc.php
(c)2007 Finisar Corporation. All rights reserved. Finisar is a registered trademark of Finisar Corporation. Features and specifications are subject to change without notice.
6/07 Rev. B

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